Numerical Investigation of Nanowire GAAS/INN Gate-All-Around TFET With HfO2/TiO2/HfO2/BaTiO3 Gate Structure

Abstract

Using TCAD simulation, we demonstrated a nanowire gate-all-around (GAA) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure. In the gate stacking, we proposed a tri-layer HfO2/TiO2/HfO2 high-K dielectric and a ferroelectric (FE) layer of barium titanate (BaTiO3). Because of its improved electrostatic control and quantum mechanical tunneling, the proposed GAA-TFET overcomes the thermionic limitation (60 mV/decade) of conventional MOSFETs' subthreshold swing (SS). Simultaneously, the state of ferroelectric materials improves TFET performance by exploiting differential amplification of the gate voltage under certain conditions. The very low DIBL of 13 mV and the transconductance of 4.92 mS are the most surprising discoveries of this device, which outperforms all previous results. The 5 nm barium titanite results in the lowest SS of 55 mV/dec. Furthermore, the output characteristics revealed a significant on-state current of 27.5A, and ION/ IOFF ratio of 1.831 x 109, and a threshold voltage of 0.95. As a result, all the results suggest that the proposed device structure may pave the way for a new path for electronic devices, resulting in higher speed and lower power consumption.