Abstract:
This thesis presents a numerical investigation of Double Gate Metal Oxide Field Effect Transistor (DGMOSFET) featuring a silicon dioxide (SiO2) gate structure. As device scaling progresses, DG-MOSFETs have gained prominence due to their enhanced electrostatic control and reduced leakage currents compared to single-gate MOSFETs. Using advanced numerical simulations, we analyze key performance metrics, including threshold voltage, subthreshold slope, Drain Induced Barrier Lowering (DIBL), and on-off current ratio. The study examines the impact of gate oxide thickness, channel length, and doping concentrations on device performance. Our findings reveal that the SiO2 gate structure in DG-MOSFETs significantly mitigates short- channel effects and leakage currents while improving subthreshold slope and threshold voltage stability. The results underscore the importance of optimizing device dimensions and material properties to achieve superior electrical characteristics. This research provides valuable insights into the development of high-performance nanoscale semiconductor devices.
