Cu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gap

dc.contributor.author	Trukhanov, Sergei V.
dc.contributor.author	Bodnar, Ivan V.
dc.contributor.author	Khoroshko, Vitaly V.
dc.contributor.author	Yashchuk, Veronika A.
dc.contributor.author	Gremenok, Valery F.
dc.contributor.author	Kazi, Mohsin
dc.contributor.author	Khandaker, Mayeen .
dc.contributor.author	Zubar, Tatiana
dc.contributor.author	Trukhanov, Sergei V.
dc.date.accessioned	2025-11-13T06:04:10Z
dc.date.available	2025-11-13T06:04:10Z
dc.date.issued	2024-01-15
dc.identifier.uri	http://dspace.daffodilvarsity.edu.bd:8080/handle/123456789/15559
dc.description	Articles	en_US
dc.description.abstract	This work describes the production of single crystals of the semiconducting quaternary compound Cu2ZnGeSe4 using a gas chemical method in which iodine was used as a transporter. For all the synthesized samples, their phase state, crystal structure syngony and lattice constants were refined. The unit cell of the studied compound is characterized by tetragonal symmetry. The transmission spectrum was applied to calculate the band gap, which is depicted as temperature function in 20–300 K range. It was fixed that the band gap increases by 12% with decreasing temperature.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Scopus	en_US
dc.subject	Cu₂ZnGeSe₄,	en_US
dc.subject	single crystals	en_US
dc.subject	gas chemical transport,	en_US
dc.subject	band gap,	en_US
dc.subject	tetragonal structure	en_US
dc.title	Cu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gap	en_US
dc.type	Article	en_US