Hassan, Md. Mehedi; Faruqe, Md. Omar
(Daffodil International University, 23-03-18)
Using TCAD simulation, we demonstrated a nanowire gate-all-around (GAA) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure. In the gate stacking, we proposed a tri-layer HfO2/TiO2/HfO2 high-K ...