Abstract:
Silicon nanostructures have recently been a subject of interest demonstrating optical properties
like luminescence. The Scientific community predicts quantum effects to be the predominant
cause for such optical properties of silicon nanostructures. With this view as a motive, a
simulation model of a 2D thin film quantum confined 2D p-n junction in silicon is developed in
this work.
A thin film silicon layer is considered in the regime of strong confinement. A p-n junction in
such a film is considered so that the carriers are confined in thickness dimension while they are
quantum mechanically transported along the device length. The transverse dimension in
considered infinitely wide for plane wave approximation. For device simulation, after a careful
study of various schemes to incorporate quantum effects, it was decided to use self-consistent
Schrodinger-Poisson method.
The simulation is done in MATLAB. For solution, instead of winger function or Green’s
function, a more direct wave-function perspective is taken. First the equilibrium condition was
simulated and then extension under externally applied voltage was carried out.
