Abstract:
Thin films of indium antimonide (InSb) were
deposited onto a well cleaned glass substrate by vacuum
evaporation technique using InSb compound as a source
material. The galvanomagnetic properties such as Hall
voltage, Hall mobility and magnetoresistance sensitivity
of the prepared films were investigated in terms of
annealing temperature. All the measurements were taken
at room temperature under the magnetic field from 0.1 T
to 1.0 T. It is observed that the magnetoresistance
sensitivity increases with the decrease of length to width
ratio of the specimen. The magnetoresistance sensitivity
of 85% was obtained for the film with the length to width
ratio of 0.8, annealed at a temperature of 470oC for 60
min. For further improvement of the sensitivity of the
film, indium (In) short-bar electrodes were deposited on
InSb film and a maximum sensitivity of 105% was
successfully achieved for the length to width ratio of 0.2
and magnetic field of 1.0 T.
