Abstract:
Impact ionization effects on hole
trapping phenomena In high electron mobility
transistor (HEMT) is investigated. For the
purpose, measurement and a trap model
simulation was done for two test devices.
Measured and simulated hole trapping time
constant and hole trap voltage for the two test
devices are calculated and their dependence on
drain bias are explored to correlate the effect of
impact ionization on hole trapping phenomena.
The model usability for device with different
impact ionization behaviour is explored.
