IMPACT IONIZATION DEPENDENCE OF HOLE TRAPPING              PHENOMENA IN HEMTS

Zaman, Saif; Parker, Anthony

dc.contributor.author	Zaman, Saif
dc.contributor.author	Parker, Anthony
dc.date.accessioned	2012-11-08T06:26:10Z
dc.date.accessioned	2019-05-28T09:37:06Z
dc.date.available	2012-11-08T06:26:10Z
dc.date.available	2019-05-28T09:37:06Z
dc.date.issued	2007-07-01
dc.identifier.uri	http://hdl.handle.net/20.500.11948/460
dc.description.abstract	Impact ionization effects on hole trapping phenomena In high electron mobility transistor (HEMT) is investigated. For the purpose, measurement and a trap model simulation was done for two test devices. Measured and simulated hole trapping time constant and hole trap voltage for the two test devices are calculated and their dependence on drain bias are explored to correlate the effect of impact ionization on hole trapping phenomena. The model usability for device with different impact ionization behaviour is explored.	en_US
dc.language.iso	en	en_US
dc.publisher	Daffodil International University	en_US
dc.subject	HEMT, Trap charge, impact ionization	en_US
dc.title	IMPACT IONIZATION DEPENDENCE OF HOLE TRAPPING PHENOMENA IN HEMTS	en_US
dc.type	Article	en_US